Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

被引：13

作者：

Amilusik, Mikolaj ^{[1
]}

Zajac, Marcin ^{[1
]}

Sochacki, Tomasz ^{[1
]}

Lucznik, Boleslaw ^{[1
]}

Fijalkowski, Michal ^{[1
]}

Iwinska, Malgorzata ^{[1
]}

Wlodarczyk, Damian ^{[2
]}

Somakumar, Ajeesh Kumar ^{[2
]}

Suchocki, Andrzej ^{[2
]}

Bockowski, Michal ^{[1
,3
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland

[3] Nagoya Univ, Ctr Integrated Res Future Elect, Inst Mat & Syst Sustainabil, Chikusa Ku, C3-1 Furo Cho, Nagoya, Aichi 4648603, Japan

来源：

MATERIALS | 2022年 / 15卷 / 07期

关键词：

gallium nitride; halide vapor phase epitaxy; co-doping; carbon; manganese; VAPOR-PHASE EPITAXY; OPTICAL-PROPERTIES; LUMINESCENCE; DEFECTS; HEMTS;

D O I：

10.3390/ma15072379

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods: x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds, but doped only with manganese or carbon. A comparison of the electrical and optical properties allowed to determine the role of manganese and carbon in doped and co-doped gallium nitride crystals.

引用

页数：14

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