High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

被引：816

作者：

Kuramata, Akito ^{[1
,2
]}

Koshi, Kimiyoshi ^{[1
,2
]}

Watanabe, Shinya ^{[1
]}

Yamaoka, Yu ^{[1
,3
]}

Masui, Takekazu ^{[1
,2
]}

Yamakoshi, Shigenobu ^{[1
,2
]}

机构：

[1] Tamura Corp, Sayama, Osaka 3501328, Japan

[2] Novel Crystal Technol Inc, Sayama, Osaka 3501328, Japan

[3] Koha Co Ltd, Tokyo 1788511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

关键词：

GALLIUM OXIDE; THIN-FILMS; TRANSPARENT; GA2O3; CONDUCTIVITY; SENSORS;

D O I：

10.7567/JJAP.55.1202A2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

beta-Ga2O3 bulk crystals were grown by the edge-defined film-fed growth (EFG) process and the floating zone process. Semiconductor substrates containing no twin boundaries with sizes up to 4 in. in diameter were fabricated. It was found that Si was the main residual impurity in the EFGgrown crystals and that the effective donor concentration (N-d -N-a) of unintentionally doped crystals was governed by the Si concentration. Intentional n-type doping was shown to be possible. An etch pit observation revealed that the dislocation density was on the order of 10(3)cm(-3) . N-d-N-a for the samples annealed in nitrogen ambient was almost the same as the Si concentration, while for the samples annealed in oxygen ambient, it was around 1 x 10(17)cm(-3) and independent of the Si concentration. (C) 2016 The Japan Society of Applied Physics

引用

页数：6

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