Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering

被引:12
|
作者
Gago, R. [1 ]
Jaafar, M. [1 ]
Palomares, F. J. [1 ]
机构
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
关键词
sputtering; surface morphology; nanopatterning; compositional issues;
D O I
10.1088/1361-648X/aac4f6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The surface morphology of molybdenum silicide (MoxSi1-x) films has been studied after low-energy Ar+ ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicideassisted nanopatterning of silicon surfaces by IBS. For this purpose, MoxSi1-x films with compositions below, equal and above the MoSi2 stoichiometry (x = 0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated MoxSi1-x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated MoxSi1-x. Contrary to silicon, MoxSi1-x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated MoxSi1-x films with 1 keV Ar(+ )at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and MoxSi1-x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on MoxSi1-x under grazing incidence is also attributed to the dominance of sputtering effects under this geometry. In conclusion, our work provides some insights into the complex morphological evolution of compound surfaces and solid experimental evidences regarding the mechanisms behind silicide-assisted nanopatterning.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Morphology simulation of the surface subjected to low-energy ion sputtering
    A. S. Shumilov
    I. I. Amirov
    Technical Physics, 2015, 60 : 1056 - 1062
  • [2] Morphology simulation of the surface subjected to low-energy ion sputtering
    Shumilov, A. S.
    Amirov, I. I.
    TECHNICAL PHYSICS, 2015, 60 (07) : 1056 - 1062
  • [3] CHANGES OF RIPPLE MORPHOLOGY OF CLEAVED Si SURFACE BY LOW-ENERGY Ar+ ION BEAM SPUTTERING
    Pahlovy, S. A.
    Mahmud, S. F.
    Yanagimoto, K.
    Miyamoto, I.
    INTERNATIONAL JOURNAL OF NANOSCIENCE, 2011, 10 (03) : 495 - 499
  • [4] Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering
    Moreno-Barrado, A.
    Gago, R.
    Redondo-Cubero, A.
    Vazquez, L.
    Munoz-Garcia, J.
    Cuerno, R.
    Lorenz, K.
    Castro, M.
    EPL, 2015, 109 (04)
  • [5] SILICIDE FORMATION STUDY ON LOW-ENERGY ION-BEAM PROCESSED SILICON
    CLIMENT, A
    FONASH, SJ
    PONPON, JP
    VACUUM, 1987, 37 (5-6) : 486 - 487
  • [6] Nanopatterning of optical surfaces during low-energy ion beam sputtering
    Liao, Wenlin
    Dai, Yifan
    Xie, Xuhui
    OPTICAL ENGINEERING, 2014, 53 (06)
  • [7] Surface Morphology Evolution of GaAs by Low Energy Ion Sputtering
    Y Wang
    SF Yoon
    CY Ngo
    J Ahn
    Nanoscale Research Letters, 2
  • [8] Surface morphology evolution of GaAs by low energy ion sputtering
    Wang, Y.
    Yoon, S. F.
    Ngo, C. Y.
    Ahn, J.
    NANOSCALE RESEARCH LETTERS, 2007, 2 (10): : 504 - 508
  • [9] MAGNETIC-PROPERTIES OF COZR AMORPHOUS FILMS PREPARED BY LOW-ENERGY ION-BEAM SPUTTERING
    TOSHIMA, T
    TAGO, A
    NISHIMURA, C
    IEEE TRANSACTIONS ON MAGNETICS, 1986, 22 (05) : 1110 - 1112
  • [10] LOW-ENERGY ION-BEAMS, MOLECULAR-BEAM EPITAXY, AND SURFACE-MORPHOLOGY
    TSAO, JY
    CHASON, E
    HORN, KM
    BRICE, DK
    PICRAUX, ST
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 72 - 80