Electronic structure of graphene/hexagonal boron nitride heterostructure revealed by NanoARPES

The ability to explore electronic structure and their role in determining material's macroscopic behaviour is essential to explain and engineer functions of material and device. Graphene/hexagonal boron nitride heterostructure (G/h-BN) has become a model system to study the emergent behaviour in 2D van der Waals heterostructure. Here by employing angle-resolved photoemission spectroscopy with sub-micrometric spatial resolution (NanoARPES), we give a full description on the electronic structure of G/h-BN, demonstrating the power of NanoARPES to detect the microscopic inhomogeneity of electronic structure for different materials.