Study of Nanoscratching Process of GaAs Using Molecular Dynamics

被引：19

作者：

Yi, Defu ^{[1
]}

Li, Jianyong ^{[1
,2
]}

Zhu, Pengzhe ^{[1
,2
]}

机构：

[1] Beijing Jiaotong Univ, Sch Mech Elect & Control Engn, Beijing 100044, Peoples R China

[2] Minist Educ, Key Lab Vehicle Adv Mfg Measuring & Control Techn, Beijing 100044, Peoples R China

来源：

CRYSTALS | 2018年 / 8卷 / 08期

基金：

中国国家自然科学基金;

关键词：

GaAs; molecular dynamics; nanoscratch; anisotropic effect; phase transformation; NANOMETRIC SCRATCHING PROCESS; GALLIUM-ARSENIDE; MONOCRYSTALLINE GERMANIUM; MATERIAL REMOVAL; SIMULATION; NANOINDENTATION; DEFORMATION; COPPER;

D O I：

10.3390/cryst8080321

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, molecular dynamics method was employed to investigate the nanoscratching process of gallium arsenide (GaAs) in order to gain insights into the material deformation and removal mechanisms in chemical mechanical polishing of GaAs. By analyzing the distribution of hydrostatic pressure and coordination number of GaAs atoms, it was found that phase transformation and amorphization were the dominant deformation mechanisms of GaAs in the scratching process. Furthermore, anisotropic effect in nanoscratching of GaAs was observed. The diverse deformation behaviors of GaAs with different crystal orientations were due to differences in the atomic structure of GaAs. The scratching resistance of GaAs(001) surface was the biggest, while the friction coefficient of GaAs(111) surface was the smallest. These findings shed light on the mechanical wear mechanism in chemical mechanical polishing of GaAs.

引用

页数：9

共 33 条

[1] HIGH-PRESSURE PHASE-TRANSITION AND PHASE-DIAGRAM OF GALLIUM-ARSENIDE [J].

BESSON, JM ;

ITIE, JP ;

POLIAN, A ;

WEILL, G ;

MANSOT, JL ;

GONZALEZ, J .

PHYSICAL REVIEW B, 1991, 44 (09) :4214-4234

[2] Extrusion formation mechanism on silicon surface under the silica cluster impact studied by molecular dynamics simulation [J].

Chen, Ruling ;

Luo, Jianbin ;

Guo, Dan ;

Lu, Xinchun .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (10)

[3] Nondislocation origin of GaAs nanoindentation pop-in event [J].

Chrobak, D. ;

Nordlund, K. ;

Nowak, R. .

PHYSICAL REVIEW LETTERS, 2007, 98 (04)

[4] Mechanical Characteristics of Nanoscratched Gallium Arsenide Using Molecular Dynamics Simulation [J].

Fang, Te-Hua ;

Lin, Shiang-Jiun ;

Hong, Zheng-Han ;

Shen, Siu-Tsen ;

Huang, Chin-Tsai .

NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2010, 2 (03) :220-225

[5] Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method [J].

Han, Xuesong ;

Hu, Yuanzhong ;

Yu, Siyuan .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 95 (03) :899-905

[6] Dislocation nucleation and defect structure during surface indentation [J].

Kelchner, CL ;

Plimpton, SJ ;

Hamilton, JC .

PHYSICAL REVIEW B, 1998, 58 (17) :11085-11088

[7] Crystal Orientation Effect on the Subsurface Deformation of Monocrystalline Germanium in Nanometric Cutting [J].

Lai, Min ;

Zhang, Xiaodong ;

Fang, Fengzhou .

NANOSCALE RESEARCH LETTERS, 2017, 12

[8] Study on nanometric cutting of germanium by molecular dynamics simulation [J].

Lai, Min ;

Zhang, Xiaodong ;

Fang, Fengzhou ;

Wang, Yufang ;

Feng, Min ;

Tian, Wanhui .

NANOSCALE RESEARCH LETTERS, 2013, 8 :1-10

[9] Microreflectance difference spectrometer based on a charge coupled device camera: surface distribution of polishing-related linear defect density in GaAs (001) [J].

Lastras-Martinez, L. F. ;

Castro-Garcia, R. ;

Balderas-Navarro, R. E. ;

Lastras-Martinez, A. .

APPLIED OPTICS, 2009, 48 (30) :5713-5717

[10] Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways [J].

Matovu, J. B. ;

Ong, P. ;

Leunissen, L. H. A. ;

Krishnan, Sitaraman ;

Babu, S. V. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (11) :P432-P439

← 1 2 3 4 →