Novel approach to MOS inversion layer mobility characterization with advanced split C-V and Hall factor analyses

被引：0

作者：

Toriumi, Akira ^{[1
]}

Kita, Koji ^{[1
]}

Irie, Hiroshi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, 7-3-1 Hongo, Tokyo 1138656, Japan

来源：

2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Parasitic effects and Matthiessen's rule have been reinvestigated in the inversion layer mobility analysis. It is shown that an advanced split C-V technique newly developed is very useful for characterizing the intrinsic inversion layer mobility in short channel MOSFETs, even with very large parasitic effects. Furthermore, the validity of Matthiessen's rule is experimentally and theoretically investigated through Hall factor analysis.

引用

页码：407 / +

页数：3

共 13 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS
ANDO, T
FOWLER, AB
STERN, F
[J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672
[2] [Anonymous], 1991, SEMICONDUCTORS
[3] IRIE H, 2005, EXT ABST SSDM, P864
[4] Coulomb and phonon scattering processes in metal-oxide-semiconductor inversion layers: Beyond Matthiessen's rule
Ishihara, T
Sano, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4A): : 1682 - 1686
[5] 2-DIMENSIONAL LATTICE SCATTERING MOBILITY IN A SEMICONDUCTOR INVERSION LAYER
KAWAJI, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) : 906 - &
[6] KOGA J, 2005, EXT ABST SSDM, P895
[7] Improved split C-V method for effective mobility extraction in sub-0.1-μm Si MOSFETs
Romanjek, K
Andrieu, F
Ernst, T
Ghibaudo, G
[J]. IEEE ELECTRON DEVICE LETTERS, 2004, 25 (08) : 583 - 585
[8] GALVANOMAGNETIC EFFECTS IN SILICON SURFACE INVERSION LAYERS
SAKAKI, H
SUGANO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) : 1016 - &
[9] Schroder D. K., 1998, SEMICONDUCTOR MAT DE
[10] Seeger K., 1985, SEMICONDUCTOR PHYS, V3rd

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