An 11-W Ka-Band GaN HPA MMIC Based on Self-Developed Empirical Model

被引：14

作者：

Yan, Xu ^{[1
]}

Zhang, Jingyuan ^{[1
,2
]}

Hu, Wenrui ^{[1
]}

Luo, Haorui ^{[1
,2
]}

Guo, Yongxin ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Singapore 117583, Singapore

[2] Natl Univ Singapore, Suzhou Res Inst, Suzhou 21512, Peoples R China

来源：

2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2020年

关键词：

High power amplifier; MMICs; Gallium Nitride; empirical model; Ka-Band;

D O I：

10.1109/APMC47863.2020.9331680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design and performance of a three-stage Ka-Band balanced high power amplifier (HPA) MMIC are presented. The proposed HPA utilizes the 150-nm GaN-SiC HEMT process and self-developed empirical model. By incorporating wideband matching networks and Lange couplers, large saturated output power, high gain, and good matching conditions are realized simultaneously. Simulated in continuous-wave (CW) operation, the proposed MMIC enjoys 20 dB gain covering 3-dB bandwidth of 32 similar to 36 GHz with better than -8 dB impedance matching. For large-signal performance, 11 W peak output power (Psat) associated with 24% power-added-efficiency (PAE) is achieved at 34.2 GHz. The die size of the proposed HPA core is 3.5x4.0 mm.

引用

页码：254 / 256

页数：3

共 8 条

[1]

Andong Huang, 2015, 2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). Proceedings, P1, DOI 10.1109/IMWS-AMP.2015.7324994

[2] Waveform comparison and PA nonlinearity effects on CP-OFDM and 5G FBMC wireless systems [J].