Numerical Analysis of Sapphire Single Crystal Growth Using the Vertical-Horizontal Gradient Freezing (VHGF) Method

被引：0

作者：

Kim, Hyung-Joong ^{[1
]}

Cha, Pil-Ryung ^{[1
]}

Kim, Seong-Gyoon ^{[2
]}

Moon, Sung-Hwan ^{[3
]}

Jang, Gye-Won ^{[3
]}

Na, Bok-Kee ^{[3
]}

Kim, Jun-Hwan ^{[3
]}

Kim, Dong-Uk ^{[1
]}

机构：

[1] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea

[2] Kunsan Natl Univ, Dept Mat Sci & Engn, Gunsan 573701, South Korea

[3] Sapphire Technol Co Ltd, Hwaseong 445922, South Korea

来源：

KOREAN JOURNAL OF METALS AND MATERIALS | 2015年 / 53卷 / 01期

关键词：

oxides; crystal growth; solidification; computer simulation; VHGF; PHASE-CHANGE; SIMULATION;

D O I：

10.3365/KJMM.2014.53.1.28

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A sapphire single crystal growth process by the Vertical-Horizontal Gradient Freezing (VHGF) method was studied by a numerical analysis technique. The heater power was controlled in order to follow the given arbitrary target heater temperature profile through the whole series of the process. Due to the influence of radiation heat transfer, the heater had spatial temperature deviation in spite of the fact that the heater power was imposed uniformly through its whole body. As a structural feature of the VHGF method, temperature at the lower part of crucible was lower than that at the upper part of crucible because it was cooler at the bottom of the furnace. Thus, the movement of the solid/liquid interface was driven in the bottom-to-top direction.

引用

页码：28 / 34

页数：7

共 17 条

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