MBE Growth and Characterization of InAs Quantum Dots on Strained GaAs1-xSbx Buffer Layer For Application in High Efficiency Solar Cells

被引：0

作者：

Ban, K. -Y. ^{[1
]}

Liu, G. M. ^{[2
]}

Bremner, S. P. ^{[1
]}

Opila, R. ^{[2
]}

Honsberg, C. B. ^{[1
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

来源：

PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have investigated InAs quantum dots (QDs) on strained GaAsSb barrier layer in different Sb compositions. Use of Sb incorporated barrier layer for QD growth gives better quantum dot properties such as density, lateral size and uniformity. Growing GaAs0.89Sb0.11 results in a doubling of QD density and a 50% decrease in size of the QDs compared to growth on GaAs. Also, size distribution of QDs became narrower after incorporating Sb. These are described based on atomic force microscope (AFM) and its analysis data. X-ray Diffraction (XRD) shows Sb composition as a function of Sb/As flux ratio. On the basis of Reflective High Energy Electron Diffraction (RHEED) oscillation surface morphology of GaAs1-xSbx is described as well.

引用

页码：167 / +

页数：2

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