Enhanced light extraction in GaN-based light-emitting diodes by evanescent wave coupling effect

被引：8

作者：

Hao, Guo-Dong ^{[1
]}

Jahir, Ahmed Mohammed ^{[1
]}

Takahashi, Tokio ^{[2
]}

Shimizu, Mitsuaki ^{[2
]}

Wang, Xue-Lun ^{[1
]}

Kishi, Hiroyuki ^{[3
]}

Hayashi, Yukiko ^{[3
]}

Takeguchi, Keigo ^{[3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanosyst Res Inst, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] Asahi Kasei Corp, Fuji, Shizuoka 4168501, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 10期

关键词：

P-TYPE GAN; NEAR-ULTRAVIOLET; QUANTUM EFFICIENCY; BLUE; PERFORMANCE; SURFACE;

D O I：

10.7567/APEX.7.102101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subwavelength-sized truncated cones satisfying the requirement for evanescent wave coupling effect at the emission wavelength were fabricated on the p-side of a GaN-based blue light-emitting diode (LED). The light-extraction efficiency increased by a factor of approximately 2.2 relative to that of a reference LED with a flat light-extraction surface. This light-extraction enhancement ratio is much larger than that realized by using conventional light-extraction techniques. The evanescent wave coupling effect appearing on the surface of the truncated-cone structure is believed to be the mechanism responsible for the large enhancement of light extraction. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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