Atomic-Force Microscopy of Resistive Nonstationary Signal Switching in ZrO2(Y) Films

被引：2

作者：

Filatov, D. O. ^{[1
]}

Koryazhkina, M. N. ^{[1
]}

Antonov, D. A. ^{[1
]}

Antonov, I. N. ^{[1
]}

Liskin, D. A. ^{[1
]}

Ryabova, M. A. ^{[1
]}

Gorshkov, O. N. ^{[1
]}

机构：

[1] Lobachevsky State Univ, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS | 2019年 / 64卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063784219110082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local resistive switching by complex nonstationary signals in zirconium-dioxide-stabilized films on conducting substrates has been studied by atomic-force microscopy with a conducting probe. Film resistance was switched by triangular voltage pulses on which a high-frequency sinusoidal signal was superimposed. It is found that the ratio of currents through the junction between the probe and film surface in high-resistance and low-resistance states increases after the superposition of a sinusoidal signal (as compared to switching by simple triangular pulses). An increase in the temporal stability of the current strength in these states was also found when switching with a sinusoidal signal. This effect is associated with resonant activation of oxygen ion migration over vacancies in an external ac electric field.

引用

页码：1579 / 1583

页数：5

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