Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

被引:17
作者
Zhu, L. S.
Zhang, J. [1 ]
Xu, X. W.
Yu, Y. Z.
Wu, X. [1 ]
Yang, T.
Wang, X. H.
机构
[1] E China Normal Univ, Shanghai Key Lab Multidimens Informat & Proc, State Key Lab Transducer Technol, 500 Dongchuan Rd, Shanghai 200241, Peoples R China
基金
中国国家自然科学基金;
关键词
H-2; detection; Room temperature; Electroless; Pd/SiNWs; Fixed potential amperometry; POROUS SILICON; HYDROGEN; PD; ADSORPTION; KINETICS; SENSORS;
D O I
10.1016/j.snb.2015.12.080
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this paper, the Schottky diode sensor composed of silicon nanowires (SiNWs) coated with palladium layers was used for room temperature H-2 detection. Pd films were deposited on silicon nanowire via electroless plating. The structural and morphological properties of the Pd/SiNWs were analyzed firstly. The current-voltage (I-V) curves of Pd/SiNWs Schottky diode structure were measured. Variations of the electrical current in the presence of H-2 at room temperature revealed that the diode sensors can sense H-2 in a wide range of concentration of 300-3000 ppm. This novel sensor has great potential for the detection of H-2 at room temperature. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:515 / 523
页数:9
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