Mechanism Investigation of p-i-n ZnO-Based Light-Emitting Diodes

被引：12

作者：

Lee, Ching-Ting ^{[1
]}

Lin, Yung-Hao ^{[1
]}

Lai, Li-Wen ^{[1
]}

Lou, Li-Ren ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 01期

关键词：

Cosputtering; vapor cooling condensation system; zinc oxide (ZnO) light-emitting diodes (LEDs); FILMS;

D O I：

10.1109/LPT.2009.2035521

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a cosputtering technique to deposit P-ZnO:AlN film and using a vapor cooling condensation system to deposit n-ZnO:In and i-ZnO films on sapphire substrates, thin-film-type ZnO-based light-emitting diodes (LEDs) were fabricated. A Nd:YAG laser with a wavelength of 413 nm is utilized to identify the defect-related emissions of p-ZnO, i-ZnO, and n-ZnO films. The characteristics of i-ZnO layer of ultraviolet (UV) emissions were analyzed using temperature-dependent photoluminescence. The mechanism of the UV electroluminescence emission peak at 3.20 eV observed from the p-i-n ZnO-based LEDs were attributed to the low deep-level defects and the radiative recombination occurred in the i-ZnO layer.

引用

页码：30 / 32

页数：3

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