Single-electron transistors based on self-assembled silicon-on-insulator quantum dots

被引:30
|
作者
Wolf, Conrad R. [1 ]
Thonke, Klaus [1 ]
Sauer, Rolf [1 ]
机构
[1] Univ Ulm, Inst Halbleiterphys, D-89069 Ulm, Germany
关键词
Coulomb blockade; electrodes; electromigration; elemental semiconductors; masks; nanofabrication; self-assembly; semiconductor quantum dots; silicon; silicon-on-insulator; single electron transistors; sputter etching; ROOM-TEMPERATURE; FABRICATION; ISLAND;
D O I
10.1063/1.3383235
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present an approach to fabricate single-electron devices consisting of a silicon quantum dot (QD) between metallic leads. Silicon QDs are obtained by reactive ion etching into a silicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes are fabricated and aligned to the QDs by an electromigration process whereby their native oxide serves as tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy of 19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulomb diamonds. The behavior is well reproduced by a numerical orthodox theory calculation.
引用
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页数:3
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