Evolution of element distribution at the interface of FTO/SiOxCy films with X-ray photoelectron spectroscopy

被引：2

作者：

Yang, J. K. ^{[1
]}

Zhang, F. C. ^{[1
]}

Chen, J. J. ^{[1
]}

Yu, B. ^{[1
]}

Gao, Y. ^{[1
]}

Zhao, M. J. ^{[1
]}

Liang, B. ^{[1
]}

Zhao, H. L. ^{[1
]}

机构：

[1] Yanshan Univ, Coll Mat Sci & Engn, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Peoples R China

来源：

MATERIALS LETTERS | 2014年 / 133卷

基金：

中国国家自然科学基金;

关键词：

FTO/SiCxOy films; Element distribution; XPS; Interface; Diffusion; SNO2; THIN-FILMS; ELECTRICAL-PROPERTIES; OXIDE; SURFACE; CVD; PHOTOEMISSION; ADSORPTION; SUBSTRATE; FLUORINE; XPS;

D O I：

10.1016/j.matlet.2014.07.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray photoelectron spectroscopy was carried out to investigate the element distribution along the film depth, especially at the interface of FTO/SiOxCy films as-deposited and post-treated at 700 degrees C for 202 s and 262 s in the tempering furnace. The results show that the middle layer may effect a little on the conductivity, while an important diffusion layer exists between the functional layer and the barrier layer. It has been proved experimentally that the exacerbated diffusion at the interface layer makes the conductivity decreased. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：247 / 250

页数：4

共 30 条

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