Planar concave grating demultiplexer on a nanophotonic silicon-on-insulator platform

被引：1

作者：

Brouckaert, Joost ^{[1
]}

Bogaerts, Wim ^{[1
]}

Dumon, Pieter ^{[1
]}

Schrauwen, Jonathan ^{[1
]}

Van Thourhout, Dries ^{[1
]}

Baets, Roel ^{[1
]}

机构：

[1] Univ Ghent VIB, IMEC, Dept Informat Technol, St-Pietersniewws Str 41, B-9000 Ghent, Belgium

来源：

2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2006年

关键词：

D O I：

10.1109/LEOS.2006.279091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present measurement results of a 4-channel silicon-on-insulator grating demultiplexer fabricated in a CMOS line. It has an ultra-small footprint of 280x150 mu m(2), 20nm channel spacing, on-chip loss of 7.5dB and crosstalk of better than -30dB.

引用

页码：312 / +

页数：2

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