Ge/Si (001) photodetector for near infrared light

被引：38
作者：
Colace, L
Masini, G
Galluzzi, F
Assanto, G
Capellini, G
Di Gaspare, L
Evangelisti, F
机构：
[1] Univ Roma TRE, Dipartimento Ingn Elettron, I-00146 Rome, Italy
[2] Univ Roma TRE, Dipartimento Fis E Amaldi, I-00146 Rome, Italy
[3] Unita INFM, I-00146 Rome, Italy
来源：
SOLID STATE PHENOMENA | 1997年 / 54卷
关键词：
near infrared detectors; Ge/Si epitaxial growth;
D O I：
10.4028/www.scientific.net/SSP.54.55
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on Ge Schottky diodes epitaxially grown on Si(001) exhibiting a good responsivity in the near-infrared up to 1.55 mu m. The Ge layers were grown by UHV chemical vapor deposition. It was found that the photocurrent increases upon increasing the reverse bias, reaching a maximum responsivity of 0.12 A/W at 1.3 mu m for 4 V bias. The leakage current density at the saturation voltage is 1 nA/mu m(2).
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收藏
页码：55 / 58
页数：4
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