Effect of Pd and Ce on the enhancement of ethanol vapor response of SnO2 thick films

被引:29
作者
Bagal, L. K. [1 ]
Patil, J. Y. [1 ]
Vaishampayan, M. V. [2 ]
Mulla, I. S. [2 ]
Suryavanshi, S. S. [1 ]
机构
[1] Solapur Univ, Sch Phys Sci, Solapur 413255, India
[2] Natl Chem Lab, Pune 411008, Maharashtra, India
关键词
Semiconductor; Ce-doped tin oxide; Thick film; Gas sensor; SEMICONDUCTOR GAS SENSORS; TIN OXIDE; NANOPARTICLES; TEMPERATURE; SENSITIVITY; CO; BEHAVIOR; SURFACE; ZNO;
D O I
10.1016/j.snb.2014.10.021
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The undoped SnO2 and 4 wt% Ce-doped SnO2 were successfully synthesized by a facile co-precipitation route. The ternary systems were prepared by Pd-loading (0.5, 1.5 and 3.0 wt%) on the 4 wt% Ce-doped SnO2 nanoparticles. The structure and morphology of the nanocrystalline powders were investigated by X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques. The nanocrystalline powders were screen printed on the alumina substrates to form thick films to investigate their gas response properties. The gas response studies reveal that 4 wt% Ce-doped SnO2 with the loading of 3.0 wt% Pd exhibits high response (88%) towards ethanol (100 ppm) at an operating temperature of 250 degrees C with quick response (6 s) and rapid recovery (20 s). The high ethanol vapor response at lower operating temperature of this sensor is attributed to the spill-over mechanism of Pd particles present on the SnO2 surface and enhancement in alkalescence of SnO2 due to Ce-doping. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:383 / 390
页数:8
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