Ultra rapid fabrication of p-type Li-doped Mg2Si0.4Sn0.6 synthesized by unique melt spinning method

被引：37
|
作者：
Tang, Xiaodan [1 ,2 ]
Wang, Guiwen [1 ]
Zheng, Yong [1 ]
Zhang, Yumeng [1 ]
Peng, Kunling [1 ,2 ]
Guo, Lijie [1 ]
Wang, Shuxia [1 ]
Zeng, Min [3 ,4 ,5 ]
Dai, Jiyan [3 ]
Wang, Guoyu [2 ]
Zhou, Xiaoyuan [1 ]
机构：
[1] Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
[2] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
[3] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[4] S China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China
[5] S China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China
来源：
SCRIPTA MATERIALIA | 2016年 / 115卷
基金：
中国国家自然科学基金;
关键词：
p-type Mg-2(Si; Sn); Melt spinning; Thermoelectric properties; ENHANCED THERMOELECTRIC PROPERTIES; THERMAL-CONDUCTIVITY; SOLID-SOLUTIONS; PERFORMANCE; MICROSTRUCTURE; OPTIMIZATION; CONVERSION; MG2SN; MG;
D O I：
10.1016/j.scriptamat.2015.12.031
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we successfully synthesized p-type Mg2(1-x)Li2xSi0.4Sn0.6 (x = 0.00, 0.01, 0.03, 0.07, 0.09) samples using a home-made melt spinning system combined with spark plasma sintering. Compared with the samples prepared by a traditional method, the processing time is reduced from typically several days to less than one hour. It is found that the electrical conductivity rises rapidly with the increase of Li content owing to the enhanced carrier density, while the Seebeck coefficient decreases concomitantly to some extent. Meanwhile, Li doping dramatically reduces the thermal conductivity, leading to an enhanced figure of merit Zr similar to 0.58 at 760 K. (C) 2015 Elsevier Ltd. All rights reserved.
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页码：52 / 56
页数：5
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