Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots

被引:15
作者
Zhukov, A. E. [1 ]
Kovsh, A. R.
Nikitina, E. V.
Ustinov, V. M.
Alferov, Zh. I.
机构
[1] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 195220, Russia
[2] NL Nanosemicond GmbH, D-44263 Dortmund, Germany
关键词
D O I
10.1134/S1063782607050223
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
It is shown that one can attain simultaneously width of the lasing spectrum in excess of 15 nm and average spectral power density higher than 10 mW/nm in injection continuous-wave lasers based on self-assembled quantum dots and emitting in the wavelength range of approximately 1.3 mu m.
引用
收藏
页码:606 / 611
页数:6
相关论文
共 10 条
  • [1] Internal efficiency of semiconductor lasers with a quantum-confined active region
    Asryan, LV
    Luryi, S
    Suris, RA
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (03) : 404 - 418
  • [2] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS
    BENISTY, H
    SOTOMAYORTORRES, CM
    WEISBUCH, C
    [J]. PHYSICAL REVIEW B, 1991, 44 (19) : 10945 - 10948
  • [3] Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications
    Grundmann, M
    Heinrichsdorff, F
    Ledentsov, NN
    Ribbat, C
    Bimberg, D
    Zhukov, AE
    Kovsh, AR
    Maximov, MV
    Shernyakov, YM
    Lifshits, DA
    Ustinov, VM
    Alferov, ZI
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4B): : 2341 - 2343
  • [4] High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures
    Livshits, DA
    Kovsh, AR
    Zhukov, AE
    Maleev, NA
    Mikhrin, SS
    Vasil'ev, AP
    Nikitina, EV
    Ustinov, VM
    Ledentsov, NN
    Lin, G
    Chi, J
    [J]. TECHNICAL PHYSICS LETTERS, 2004, 30 (01) : 9 - 11
  • [5] Simultaneous two-state lasing in quantum-dot lasers
    Markus, A
    Chen, JX
    Paranthoën, C
    Fiore, A
    Platz, C
    Gauthier-Lafaye, O
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1818 - 1820
  • [6] A spatially single-mode laser for a range of 1.25-1.28 μm on the basis of InAs quantum dots on a GaAs substrate
    Mikhrin, SS
    Zhukov, AE
    Kovsh, AR
    Maleev, NA
    Ustinov, VM
    Shernyakov, YM
    Kayander, IN
    Kondrat'eva, EY
    Livshits, DA
    Tarasov, IS
    Maksimov, MV
    Tsatsul'nikov, AF
    Ledentsov, NN
    Kop'ev, PS
    Bimberg, D
    Alferov, ZI
    [J]. SEMICONDUCTORS, 2000, 34 (01) : 119 - 121
  • [7] Mukai K, 1996, APPL PHYS LETT, V68, P3013, DOI 10.1063/1.116681
  • [8] Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
    Sugawara, M
    Mukai, K
    Nakata, Y
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (11) : 1561 - 1563
  • [9] Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
    Zhukov, AE
    Kovsh, AR
    Ustinov, VM
    Shernyakov, YM
    Mikhrin, SS
    Maleev, NA
    Kondrat'eva, EY
    Livshits, DA
    Maximov, MV
    Volovik, BV
    Bedarev, DA
    Musikhin, YG
    Ledentsov, NN
    Kop'ev, PS
    Alferov, ZI
    Bimberg, D
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (11) : 1345 - 1347
  • [10] Output power and its limitation in ridge-waveguide 1.3 μm wavelength quantum-dot lasers
    Zhukov, AE
    Kovsh, AR
    Livshits, DA
    Ustinov, VM
    Alferov, ZI
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (08) : 774 - 781