Ferromagnetism of manganese-doped InSb alloys

被引：25

作者：

Novotortsev, V. M.

Zakharov, I. S.

Kochura, A. V.

Marenkin, S. F.

Laiho, R.

Lahderanta, E.

Lashkul, A.

Veresov, A. G.

Molchanov, A. V.

Yur'ev, G. S.

机构：

[1] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 119991, Russia

[2] Kursk State Tech Univ, Kursk, Russia

[3] Univ Turku, Wihuri Phys Lab, FIN-20014 Turku, Finland

[4] Lappeenranta Univ Technol, Dept Phys, FIN-53851 Lappeenranta, Finland

[5] Moscow MV Lomonosov State Univ, Moscow 119992, Russia

[6] Russian Acad Sci, Inst Inorgan Chem, Siberian Div, Novosibirsk 630090, Russia

来源：

RUSSIAN JOURNAL OF INORGANIC CHEMISTRY | 2006年 / 51卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S0036023606100172

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

InSb samples containing 0.22-1.42 wt % manganese were synthesized and identified. The unit cell parameter decreased as the manganese concentration increased. The samples contained microinclusions of manganese antimonides. Electrical and magnetic measurements showed two ferromagnetic phases (In1-x MnxSb solid solution with T-c similar to 7 K and MnSb with T-c similar to 580 K) and a ferrimagnetic phase (Mn2Sb). The samples had p-type conductivity with a charge carrier concentration of about 10(20) cm(-3). The semiconductor conductivity was observed at low temperatures and changed to the metal conductivity with temperature elevation.

引用

页码：1627 / 1631

页数：5

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