Surface reaction of CF2 radicals for fluorocarbon film formation in SiO2/Si selective etching process

被引：64

作者：

Inayoshi, M

Ito, M

Hori, M ^{[1
]}

Goto, T

Hiramatsu, M

机构：

[1] Nagoya Univ, Sch Engn, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 46401, Japan

[2] Meijo Univ, Fac Sci & Technol, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 01期

关键词：

D O I：

10.1116/1.580977

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The surface reaction of CF2 radicals on Si and fluorocarbon films was investigated in electron cyclotron resonance (ECR) Ar and H-2/Ar downstream plasmas employing CF2 radical injection technique. The effects of Ar+ ions, Ar* metastable species and radiation from plasmas on the fluorocarbon film formation were evaluated in ECR Ar downstream plasma with CF2 radical injection. As a result, CF2 radicals with assistance of Ar+ ion bombardment were found to play an important role in the fluorocarbon film formation. The adsorptive reactions of CF2 radicals on the fluorocarbon film surface with and without Ar and H-2/Ar plasma exposures were successfully investigated by in situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy. It was found that the formation of fluorocarbon film in the plasma proceeded through the adsorptive reaction of CF2 radicals at a high probability on the active sites formed by the bombardment of Ar+ ions on the fluorocarbon film surface. (C) 1998 American Vacuum Society.

引用

页码：233 / 238

页数：6

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