Germanium-on-SOI waveguides for mid-infrared wavelengths

被引:38
|
作者
Younis, Usman [1 ]
Vanga, Sudheer K. [2 ]
Lim, Andy Eu-Jin [3 ]
Lo, Patrick Guo-Qiang [3 ]
Bettiol, Andrew A. [2 ]
Ang, Kah-Wee [1 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore 117583, Singapore
[2] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore
[3] Agcy Sci Technol & Res, Inst Microelect, 11 Sci Pk Rd, Singapore 117685, Singapore
来源
OPTICS EXPRESS | 2016年 / 24卷 / 11期
关键词
SILICON;
D O I
10.1364/OE.24.011987
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on the development of Germanium-on-SOI waveguides for mid-infrared wavelengths. The strip waveguides have been formed in 0.85 and 2 mu m thick Ge grown on SOI substrate with 220 nm thick Si overlayer. The propagation loss for various waveguide widths has been measured using the Fabry-Perot method with temperature tuning. The minimum loss of similar to 8 dB/cm has been achieved for 0.85 mu m thick Ge core using 3.682 mu m laser excitation. The transparency of these waveguides has been measured up to at least 3.82 mu m. (C) 2016 Optical Society of America
引用
收藏
页码:1987 / 1993
页数:7
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