Germanium-on-SOI waveguides for mid-infrared wavelengths

被引：38

作者：

Younis, Usman ^{[1
]}

Vanga, Sudheer K. ^{[2
]}

Lim, Andy Eu-Jin ^{[3
]}

Lo, Patrick Guo-Qiang ^{[3
]}

Bettiol, Andrew A. ^{[2
]}

Ang, Kah-Wee ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore 117583, Singapore

[2] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore

[3] Agcy Sci Technol & Res, Inst Microelect, 11 Sci Pk Rd, Singapore 117685, Singapore

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 11期

关键词：

SILICON;

D O I：

10.1364/OE.24.011987

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the development of Germanium-on-SOI waveguides for mid-infrared wavelengths. The strip waveguides have been formed in 0.85 and 2 mu m thick Ge grown on SOI substrate with 220 nm thick Si overlayer. The propagation loss for various waveguide widths has been measured using the Fabry-Perot method with temperature tuning. The minimum loss of similar to 8 dB/cm has been achieved for 0.85 mu m thick Ge core using 3.682 mu m laser excitation. The transparency of these waveguides has been measured up to at least 3.82 mu m. (C) 2016 Optical Society of America

引用

页码：1987 / 1993

页数：7

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