A pressure tuned stop-flow atomic layer deposition process for MoS2 on high porous nanostructure and fabrication of TiO2/MoS2 core/shell inverse opal structure

被引：33

作者：

Li, Xianglin ^{[1
]}

Puttaswamy, Manjunath ^{[1
]}

Wang, Zhiwei ^{[1
]}

Tan, Chiew Kei ^{[1
]}

Grimsdale, Andrew C. ^{[1
]}

Kherani, Nazir P. ^{[2
]}

Tok, Alfred Ling Yoong ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Univ Toronto, Dept Elect & Comp Engn, 10 Kings Coll Rd,Room GB254B, Toronto, ON M5S 3G4, Canada

来源：

APPLIED SURFACE SCIENCE | 2017年 / 422卷

关键词：

Atomic layer deposition; MoS2; TiO2; Inverse opal; Photonic crystal; PHOTONIC CRYSTALS; THIN-FILM; TIO2; NANOSHEETS; HETEROSTRUCTURES; PHOTOANODE; AREA;

D O I：

10.1016/j.apsusc.2017.06.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

MoS2 thin films are obtained by atomic layer deposition (ALD) in the temperature range of 120-150 degrees C using Mo(CO)(6) and dimethyl disulfide (DMDS) as precursors. A pressure tuned stop-flow ALD process facilitates the precursor adsorption and enables the deposition of MoS2 on high porous three dimensional (3D) nanostructures. As a demonstration, a TiO2/MoS2 core/shell inverse opal (TiO2/MoS2-IO) structure has been fabricated through ALD of TiO2 and MoS2 on a self-assembled multilayer polystyrene (PS) structure template. Due to the self-limiting surface reaction mechanism of ALD and the utilization of pressure tuned stop-flow ALD processes, the as fabricated TiO2/MoS2-IO structure has a high uniformity, reflected by FESEM and FIB-SEM characterization. A crystallized TiO2/MoS2-IO structure can be obtained through a post annealing process. As a 3D photonic crystal, the TiO2/MoS2-IO exhibits obvious stopband reflecting peaks, which can be adjusted through changing the opal diameters as well as the thickness of MoS2 layer. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：536 / 543

页数：8

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