RETRACTED: Recent progress in processing and properties of ZnO (Retracted Article)

被引：1602
作者：
Pearton, SJ
Norton, DP
Ip, K
Heo, YW
Steiner, T
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] USAF, Off Sci Res, Arlington, VA 22217 USA
来源：
PROGRESS IN MATERIALS SCIENCE | 2005年 / 50卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/j.pmatsci.2004.04.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferro-magnetism in transition-metal doped ZnO. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：293 / 340
页数：48
相关论文
共 164 条
[1]   Nonalloy Ohmic contact fabrication in a hydrothermally grown n-ZnO (0001) substrate by KrF excimer laser irradiation [J].
Akane, T ;
Sugioka, K ;
Midorikawa, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1406-1408
[2]   ZnO diode fabricated by excimer-laser doping [J].
Aoki, T ;
Hatanaka, Y ;
Look, DC .
APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258
[3]   Electrical characterization of 1.8 MeV proton-bombarded ZnO [J].
Auret, FD ;
Goodman, SA ;
Hayes, M ;
Legodi, MJ ;
van Laarhoven, HA ;
Look, DC .
APPLIED PHYSICS LETTERS, 2001, 79 (19) :3074-3076
[4]   Electrical characterization of vapor-phase-grown single-crystal ZnO [J].
Auret, FD ;
Goodman, SA ;
Legodi, MJ ;
Meyer, WE ;
Look, DC .
APPLIED PHYSICS LETTERS, 2002, 80 (08) :1340-1342
[5]   The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO [J].
Auret, FD ;
Goodman, SA ;
Hayes, M ;
Legodi, MJ ;
van Laarhoven, HA ;
Look, DC .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (40) :8989-8999
[6]   Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE [J].
Bagnall, DM ;
Chen, YF ;
Shen, MY ;
Zhu, Z ;
Goto, T ;
Yao, T .
JOURNAL OF CRYSTAL GROWTH, 1998, 184 :605-609
[7]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[8]   Highly textured and conductive undoped ZnO film using hydrogen post-treatment [J].
Baik, SJ ;
Jang, JH ;
Lee, CH ;
Cho, WY ;
Lim, KS .
APPLIED PHYSICS LETTERS, 1997, 70 (26) :3516-3518
[9]   LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE [J].
BETHKE, S ;
PAN, H ;
WESSELS, BW .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :138-140
[10]   Ferromagnetic superexchange in Cr-based diluted magnetic semiconductors [J].
Blinowski, J ;
Kacman, P ;
Majewski, JA .
PHYSICAL REVIEW B, 1996, 53 (15) :9524-9527
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