Interfacial reactions at Fe/topological insulator spin contacts

被引：6
作者：
Majumder, Sarmita [1 ]
Jarvis, Karalee [1 ]
Banerjee, Sanjay K. [1 ]
Kavanagh, Karen L. [2 ]
机构：
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2017年 / 35卷 / 04期
基金：
美国国家卫生研究院; 加拿大自然科学与工程研究理事会;
关键词：
TOPOLOGICAL INSULATOR; ELECTRICAL DETECTION; ROOM-TEMPERATURE; SURFACE;
D O I：
10.1116/1.4991331
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors study the composition and abruptness of the interfacial layers that form during deposition and patterning of a ferromagnet, Fe on a topological insulator (TI), Bi2Se3, Bi2Te3, and SiOx/Bi2Te3. Such structures are potentially useful for spintronics. Cross-sectional transmission electron microscopy, including interfacial elemental mapping, confirms that Fe reacts with Bi2Se3 near room temperature, forming an abrupt 5 nm thick FeSe0.92 single crystalline binary phase, predominantly (001) oriented, with lattice fringe spacing of 0.55 nm. In contrast, Fe/Bi2Te3 forms a polycrystalline Fe/TI interfacial alloy that can be prevented by the addition of an evaporated SiOx separating Fe from the TI. (C) 2017 American Vacuum Society.
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页数：5
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