Carbon nanotube-thin film transistor model for terahertz detectors

被引：0
|
作者：
Park, Junsung [1 ]
Liu, Xueqing [1 ]
Ytterdal, Trond [2 ]
Shur, Michael [1 ,3 ]
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, Trondheim, Norway
[3] Elect Future Inc, A-22181 Vienna, VA, Austria
来源：
2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2020年
关键词：
D O I：
10.1109/IRMMW-THZ46771.2020.9370980
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose the device model for terahertz (THz) response of the carbon nanotubes (CNT) mat-based thin film transistors (TFTs). Next generation THz detectors require not only high responsivity, but high flexibility and easy processability. Thus, the CNT mat is a potential material for the new THz detectors because of its great mechanical and electrical properties, and low cost solution processability. The present compact CNTTFT model precisely simulates DC characteristics of the device, and detector response to the THz radiation, revealing CNT-TFT's nonresonant response with wide dynamic range above threshold.
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