Temperature dependence of current-voltage characteristics of gold-strontium titanate thin film Schottky diode

被引：28
作者：
Gupta, R. K. [1 ]
Ghosh, K. [1 ]
Kahol, P. K. [1 ]
机构：
[1] Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 05期
关键词：
Strontium titanate; Junction; Pulsed laser; Barrier height; Ideality factor; P-N-JUNCTION; ELECTRICAL CHARACTERISTICS; SRTIO3; PARAMETERS;
D O I：
10.1016/j.physe.2009.12.007
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Gold-strontium titanate (Au-STO) Schottky diode is fabricated using pulsed laser deposition technique. The current-voltage characteristics of the device show non-linear behavior. The junction parameters such as ideality factor, barrier height, and series resistance are calculated using Cheung and Norde's methods. The effect of temperature on diode parameters is studied in details. It is observed that the barrier height varies almost linearly with temperature and the values increase from 0.39 to 0.72 eV in temperature range 150-300 K. The ideality factor decreases from 18 to 3 with increase in temperature from 150 to 300 K. High ideality factor suggests formation of non-ideal Schottky junction between gold and STO. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1509 / 1512
页数：4
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