Wafer Level Warpage Modelling and Validation for FOWLP Considering Effects of Viscoelastic Material Properties Under Process Loadings

被引:14
作者
Chen, Zhaohui [1 ]
Zhang, Xiaowu [1 ]
Lim, Sharon Pei Siang [1 ]
Lim, Simon Siak Boon [1 ]
Lau, Boon Long [1 ]
Han, Yong [1 ]
Jong, Ming Chinq [1 ]
Liu, Songlin [2 ]
Wang, Xiaobai [2 ]
Andriani, Yosephine [2 ]
机构
[1] ASTAR, Inst Microelect, 2 Fusionopolis Way,08-02 Innovis Tower, Singapore 138634, Singapore
[2] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way,08-02 Innovis Tower, Singapore 138634, Singapore
来源
2019 IEEE 69TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2019年
关键词
Warpage correction; Viscoelastic; 12 inch mold-first FOWLP; Wafer level warpage;
D O I
10.1109/ECTC.2019.00237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Wafer level warpage model was developed for the 12 inch mold-first FOWLP wafer with model change technique. The sequential process loadings of post-mold curing (PMC) (150 degrees C), warpage correction (150 degrees C and pressure), dielectric curing (190 degrees C), seed layer PVD (160 degrees C) and blank Cu electroplating were applied. The time and temperature dependent material properties of EMC and dielectric were considered in the model. The warpages of the 12 inch mold-first FOWLP wafer after the sequential processes were measured by the Nikon surface profiler and correlated with the predicted wafer warpage results. The predicted warpage results have good correlation with the experimental results. The warpage of FOWLP wafer was reduced after warpage correction. However, the warpage will increase after dielectric coating and curing. After PVD process, warpage will increase further. The viscoelastic material properties of EMC and dielectrics are critical for the warpage prediction under the process loadings. Only considering elastic material properties, the warpage behavior cannot be predicted. The developed wafer level warpage model considering time and temperature dependent material properties can be used for the warpage optimization and control for FOWLP development.
引用
收藏
页码:1543 / 1549
页数:7
相关论文
共 8 条
[1]  
Andriani Yosephine, 2018 20 EL PACK TECH
[2]   Study on the Reliability of Application-Specific LED Package by Thermal Shock Testing, Failure Analysis, and Fluid-Solid Coupling Thermo-Mechanical Simulation [J].
Chen, Zhaohui ;
Zhang, Qin ;
Jiao, Feng ;
Chen, Run ;
Wang, Kai ;
Chen, Mingxiang ;
Liu, Sheng .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2012, 2 (07) :1135-1142
[3]  
Chen Zhaohui, 2018, P 68 EL COMP TECHN C
[4]  
Chhanda N.J., 2011, P ASME INTERPACK NO, V44625, P749
[5]  
Chhanda NJ, 2012, INTSOC CONF THERMAL, P269, DOI 10.1109/ITHERM.2012.6231440
[6]   Process and Reliability of Large Fan-Out Wafer Level Package based Package-on-Package [J].
Rao, Vempati Srinivasa ;
Chong, Chai Tai ;
Ho, David ;
Zhi, Ding Mian ;
Choong, Chong Ser ;
Lim, Sharon P. S. ;
Ismael, Daniel ;
Liang, Ye Yong .
2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017), 2017, :615-622
[7]  
Shen Huiqiang, 2015, 2015 16th International Conference on Electronic Packaging Technology (ICEPT), P1242, DOI 10.1109/ICEPT.2015.7236804
[8]  
Wang Xiaobai, 2018 20 EL PACK TECH