In situ impedance measurements in diamond anvil cell under high pressure

被引:23
作者
Wang, Yue [1 ]
Han, Yonghao [1 ]
Gao, Chunxiao [1 ]
Ma, Yanzhang [2 ]
Liu, Cailong [3 ]
Peng, Gang [3 ]
Wu, Baojia [3 ]
Liu, Bao [3 ]
Hu, Tingjing [3 ]
Cui, Xiaoyan [3 ]
Ren, Wanbin [3 ]
Li, Yan [3 ]
Su, Ningning [3 ]
Liu, Hongwu [3 ]
Zou, Guangtian [3 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA
[3] Jilin Univ, Inst Atom & Mol Phys, Changchun 130012, Peoples R China
关键词
electric impedance; electric impedance measurement; electrodes; high-pressure effects; high-pressure techniques; II-VI semiconductors; nanostructured materials; wide band gap semiconductors; zinc compounds; PHASE-TRANSITION; ZNS; SUPERCONDUCTIVITY; METALLIZATION;
D O I
10.1063/1.3282444
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Two-electrode configuration was developed for in situ electrical impedance detecting on diamond anvil cell under high pressure. The metal gasket was used as one electrode and the risk coming from electrical short between sample and interside wall of the gasket was eliminated. The configuration was evaluated and proved to be effective by measuring the electric impedance of nanocrystalline ZnS under high pressure.
引用
收藏
页数:4
相关论文
共 24 条
  • [1] Catti M, 2002, PHYS REV B, V65, DOI 10.1103/PhysRevB.65.224115
  • [2] Pressure-induced structural changes in ZnS
    Desgreniers, S
    Beaulieu, L
    Lepage, I
    [J]. PHYSICAL REVIEW B, 2000, 61 (13): : 8726 - 8733
  • [3] Superconductivity in hydrogen dominant materials: Silane
    Eremets, M. I.
    Trojan, I. A.
    Medvedev, S. A.
    Tse, J. S.
    Yao, Y.
    [J]. SCIENCE, 2008, 319 (5869) : 1506 - 1509
  • [4] Megabar high-pressure cells for Raman measurements
    Eremets, MI
    [J]. JOURNAL OF RAMAN SPECTROSCOPY, 2003, 34 (7-8) : 515 - 518
  • [5] Hall-effect and resistivity measurements in CdTe and ZnTe at high pressure: Electronic structure of impurities in the zinc-blende phase and the semimetallic or metallic character of the high-pressure phases
    Errandonea, D.
    Segura, A.
    Martinez-Garcia, D.
    Munoz-San Jose, V.
    [J]. PHYSICAL REVIEW B, 2009, 79 (12):
  • [6] Accurate measurements of high pressure resistivity in a diamond anvil cell
    Gao, CX
    Han, YH
    Ma, YZ
    White, A
    Liu, HW
    Luo, JF
    Li, M
    He, CY
    Hao, AM
    Huang, XW
    Pan, YW
    Zou, GT
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (08) : 1 - 5
  • [7] Compressibility of zinc sulfide nanoparticles
    Gilbert, B.
    Zhang, H.
    Chen, B.
    Kunz, M.
    Huang, F.
    Banfield, J. F.
    [J]. PHYSICAL REVIEW B, 2006, 74 (11)
  • [8] BAND-OVERLAP METALLIZATION OF BATE
    GRZYBOWSKI, TA
    RUOFF, AL
    [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (05) : 489 - 492
  • [9] Integrated microcircuit on a diamond anvil for high-pressure electrical resistivity measurement
    Han, YH
    Gao, CX
    Ma, YZ
    Liu, HW
    Pan, YW
    Luo, JF
    Li, M
    He, CY
    Huang, XW
    Zou, GT
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (06) : 1 - 3
  • [10] The revealing role of pressure in the condensed matter sciences
    Hemley, RJ
    Ashcroft, NW
    [J]. PHYSICS TODAY, 1998, 51 (08) : 26 - 32