Effect of CdS modification on photoelectric properties of TiO2/PbS quantum dots bulk heterojunction

被引：5
作者：
Shi, Xin [1 ,2 ]
Xu, Jianping [2 ]
Shi, Shaobo [3 ]
Zhang, Xiaosong [2 ]
Li, Shubin [2 ]
Wang, Chang [2 ]
Wang, Xueliang [2 ]
Li, Linlin [2 ]
Li, Lan [2 ]
机构：
[1] Tianjin Univ Technol, Coll Sci, Tianjin 300384, Peoples R China
[2] Tianjin Univ Technol, Inst Mat Phys, Key Lab Display Mat & Photoelect Devices, Minist Educ, Tianjin 300384, Peoples R China
[3] Tianjin Univ Technol & Educ, Sch Sci, Tianjin 300222, Peoples R China
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2016年 / 93卷
基金：
国家高技术研究发展计划(863计划);
关键词：
Quantum dots; Bulk heterojunction; Defect states; Trap states; SENSITIZED SOLAR-CELLS; LIGHT-EMITTING DEVICES; PERFORMANCE; FABRICATION; PHOTODETECTORS; NANOPARTICLES; INTEGRATION; NANOFIBERS; ELECTRODES; MATRIX;
D O I：
10.1016/j.jpcs.2016.01.018
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
TiO2/PbS(CdS) quantum dots (QDs) bulk heterojunction has been fabricated by successive ionic layer adsorption and reaction method via alternate deposition of PbS and CdS QDs. In comparison with TiO2/PbS heterojunction, the incident photon to current conversion efficiency was increased almost 50% in the visible region. Meantime, the short-circuit current and open-circuit voltage were enhanced 200% and 35% respectively. The influence mechanism of CdS is related to reduction of trap state density at TiO2/PbS interface and PbS QDs surface by the discussion of the dark current density-voltage curves, the transient photocurrent response curves and the electrochemical impedance spectra spectroscopy (EIS). (C) 2016 Published by Elsevier Ltd.
引用
收藏
页码：33 / 39
页数：7
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