Effect of CdS modification on photoelectric properties of TiO2/PbS quantum dots bulk heterojunction

被引：5

作者：

Shi, Xin ^{[1
,2
]}

Xu, Jianping ^{[2
]}

Shi, Shaobo ^{[3
]}

Zhang, Xiaosong ^{[2
]}

Li, Shubin ^{[2
]}

Wang, Chang ^{[2
]}

Wang, Xueliang ^{[2
]}

Li, Linlin ^{[2
]}

Li, Lan ^{[2
]}

机构：

[1] Tianjin Univ Technol, Coll Sci, Tianjin 300384, Peoples R China

[2] Tianjin Univ Technol, Inst Mat Phys, Key Lab Display Mat & Photoelect Devices, Minist Educ, Tianjin 300384, Peoples R China

[3] Tianjin Univ Technol & Educ, Sch Sci, Tianjin 300222, Peoples R China

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2016年 / 93卷

基金：

国家高技术研究发展计划(863计划);

关键词：

Quantum dots; Bulk heterojunction; Defect states; Trap states; SENSITIZED SOLAR-CELLS; LIGHT-EMITTING DEVICES; PERFORMANCE; FABRICATION; PHOTODETECTORS; NANOPARTICLES; INTEGRATION; NANOFIBERS; ELECTRODES; MATRIX;

D O I：

10.1016/j.jpcs.2016.01.018

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

TiO2/PbS(CdS) quantum dots (QDs) bulk heterojunction has been fabricated by successive ionic layer adsorption and reaction method via alternate deposition of PbS and CdS QDs. In comparison with TiO2/PbS heterojunction, the incident photon to current conversion efficiency was increased almost 50% in the visible region. Meantime, the short-circuit current and open-circuit voltage were enhanced 200% and 35% respectively. The influence mechanism of CdS is related to reduction of trap state density at TiO2/PbS interface and PbS QDs surface by the discussion of the dark current density-voltage curves, the transient photocurrent response curves and the electrochemical impedance spectra spectroscopy (EIS). (C) 2016 Published by Elsevier Ltd.

引用

页码：33 / 39

页数：7

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