Low-Power Floating-Point Adaptive-CORDIC-Based FFT Twiddle Factor on 65-nm Silicon-on-Thin-BOX (SOTB) With Back-Gate Bias

被引:2
|
作者
Trong-Thuc Hoang [1 ]
Xuan-Thuan Nguyen [2 ]
Duc-Hung Le [3 ]
Cong-Kha Pham [1 ]
机构
[1] Univ Electrocommun, Dept Informat & Network Engn, Tokyo 1828585, Japan
[2] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3H7, Canada
[3] Univ Sci, Fac Elect & Telecommun, Ho Chi Minh City 700000, Vietnam
关键词
Back-gate bias; CORDIC; floating-point; low-power; SOTB; twiddle factor; ARCHITECTURE;
D O I
10.1109/TCSII.2019.2928138
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this brief, a silicon-on-thin-BOX (SOTB) implementation of single-precision floating-point fast-Fourier-transform (FFT) twiddle factor (TF) is presented. The architecture of the proposed TF is developed based on the adaptive method of the coordinate rotation digital computer (CORDIC) algorithm. The 65-nm SOTB technology was chosen because of its ultra-low-power advantage. Furthermore, the back-gate bias technique can be applied on an SOTB chip to adjust the operation for high-performance or low-power requirement. The layout of the SOTB 65-nm TF core is about 22 869 gate-count on the die area of 86 721 mu m(2). The measurement results show that the core reached its highest operating frequency of 55 MHz at the 1.2-V supply voltage (V-DD) with the forward back-gate bias (FBB) >= 1.5 V. The power and energy consumptions at this point were 1.54 mW and 27.91 pJ/cycle, respectively. The lowest operating V-DD was at 0.5 V with the FBB >= 0.5 V. In the standby mode, when the clock-gating technique was deployed, the leakage current can be reduced to 0.4 nA at the 0.4 V V-DD and -2.5-V reverse back-gate bias (RBB).
引用
收藏
页码:1723 / 1727
页数:5
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