Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene

被引：76

作者：

Dushenko, S. ^{[1
,2
]}

Ago, H. ^{[3
]}

Kawahara, K. ^{[3
]}

Tsuda, T. ^{[4
]}

Kuwabata, S. ^{[4
]}

Takenobu, T. ^{[5
]}

Shinjo, T. ^{[2
]}

Ando, Y. ^{[2
]}

Shiraishi, M. ^{[2
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[3] Kyushu Univ, Inst Mat Chem & Engn, Fukuoka 8168508, Japan

[4] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[5] Waseda Univ, Sch Adv Sci & Engn, Tokyo 1698555, Japan

来源：

PHYSICAL REVIEW LETTERS | 2016年 / 116卷 / 16期

关键词：

ORIENTATION; ELECTRONS; TEMPERATURE; HYSTERESIS; INTERFACE; RESONANCE; TRANSPORT; LIQUID;

D O I：

10.1103/PhysRevLett.116.166102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.

引用

页数：6

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