Highly conducting indium-tin-oxide transparent films prepared by dip-coating with an indium carboxylate salt

被引：33

作者：

Seki, S

Sawada, Y

Ogawa, M

Yamamoto, M

Kagota, Y

Shida, A

Ide, M

机构：

[1] Tokyo Inst Polytech, Grad Sch Engn, Dept Ind Chem, Atsugi, Kanagawa 2430297, Japan

[2] Tokyo Inst Polytech, Fac Engn, Dept Appl Chem, Atsugi, Kanagawa 2430297, Japan

[3] Yokohama City Ctr Ind Technol & Design, Yokohama, Kanagawa 2360004, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 2003年 / 169卷

关键词：

indium oxide; tin; sol-gel; X-ray fluorescence; profilometry;

D O I：

10.1016/S0257-8972(03)00170-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tin-doped In2O3 (ITO) transparent conducting films were prepared by the dip-coating process using a novel solution, indium triformate. In(OCHO)(3), and tin dichloride, SnCl2.2H(2)O, dissolved in the ethanol containing 2-aminoethanol, H2NC2H4OH. The composition of the films (thickness, similar to295 nm) agreed approximately with that of the solution when the dipping and the heating in air at 600 degreesC for 30 min were repeated 30 times. The ITO films were highly transparent in the visible range. The influence of the film composition [Sn/(In+Sn)) on the electrical properties of the as-deposited films was investigated between 0 and 20 at.%Sn. The maximum carrier concentration (1.0 x 10(21) cm(-3)) and minimum resistivity (2.1 x 10(-4) ohm cm) were obtained at 6.1 at.%Sn with relatively high mobility (28 cm(2)V(-1) s(-1)) after annealing in N-2-0.1%H-2 flow at 600 degreesC for 1 h. 4) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：525 / 527

页数：3

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