Advances in 3D CMOS Sequential Integration

被引：0

作者：

Batude, P. ^{[1
]}

Vinet, M. ^{[1
]}

Pouydebasque, A. ^{[1
]}

Le Royer, C. ^{[1
]}

Previtali, B. ^{[1
]}

Tabone, C. ^{[1
]}

Hartmann, J. -M. ^{[1
]}

Sanchez, L. ^{[1
]}

Baud, L. ^{[1
]}

Carron, V. ^{[1
]}

Toffoli, A. ^{[1
]}

Allain, F. ^{[1
]}

Mazzocchi, V. ^{[1
]}

Lafond, D. ^{[1
]}

Thomas, O. ^{[1
]}

Cueto, O. ^{[1
]}

Bouzaida, N. ^{[1
]}

Fleury, D. ^{[2
]}

Amara, A.

Deleonibus, S. ^{[1
]}

Faynot, O. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC, 17 Rue Martyrs, F-38054 Grenoble, France

[2] SMicroelect, F-38926 Crolles, France

来源：

2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time 3D sequential CMOS integration turns up to be an actual competitor for sub 22nm technology nodes. Thanks to the original use of molecular bonding, high quality top Si active layers are obtained. Thermally robust bottom salicide goes through the whole top FET processing without any significant sheet resistance degradation. The low temperature integration of raised source and drain for top layers is demonstrated. A decrease by 44 of the Equivalent Oxide Thickness is measured when a low thermal budget process is implemented. The electrostatic coupling between stacked FETs is demonstrated thanks to an ultra thin inter layer dielectric thickness of 60nm. It leads to a threshold voltage dynamic shift of 130mV enabling SRAM stabilization.

引用

页码：319 / +

页数：2