A novel silicon photovoltaic cell using a low-temperature quasi-epitaxial silicon emitter

被引：3

作者：

Farrokh-Baroughi, Mahdi ^{[1
]}

Sivoththaman, Siva ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 07期

关键词：

chemical vapor deposition (CVD); epitaxy; silicon; solar cell;

D O I：

10.1109/LED.2007.897873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new silicon solar cell fabricated using a low-temperature process is demonstrated with a highly conductive (n(+)) quasi-epitaxial (qEpi-Si) silicon emitter deposited on silicon substrates, without using transparent conductive oxides. The emitter was formed by a plasma-enhanced chemical vapor deposition process on granular multicrystalline silicon (mc-Si) substrates at a substrate temperature of 250 degrees C. The new (n(+))qEpi-Si/(p)mc-Si junction was found to be of good quality for photovoltaic applications. Solar cells of 1-cm(2) area and conversion efficiencies exceeding 10% have been fabricated in a simple fabrication process and device structure.

引用

页码：575 / 577

页数：3

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