Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography

被引：29

作者：

Batten, T. ^{[1
]}

Manoi, A. ^{[1
]}

Uren, M. J. ^{[2
]}

Martin, T. ^{[2
]}

Kuball, M. ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] QinetiQ Ltd, Malvern WR14 3PS, Worcs, England

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS; THERMAL-BOUNDARY RESISTANCE; ENERGY-GAP;

D O I：

10.1063/1.3359651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) spectroscopy was used to determine lateral temperature distributions in AlGaN/GaN based devices. Results are compared to Raman thermography data and to thermal modeling to assess challenges in the determination of temperature in devices using PL analysis and corresponding solutions. In conjunction with Raman thermography, the vertical temperature distribution in the devices is determined and the thermal boundary resistance at the GaN/SiC interface extracted. (C) 2010 American Institute of Physics. [doi:10.1063/1.3359651]

引用

页数：5

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