Advanced FIB mask repair technology for ArF lithography

被引：12

作者：

Hiruta, K ^{[1
]}

Kubo, S ^{[1
]}

Morimoto, H ^{[1
]}

Yasaka, A ^{[1
]}

Hagiwara, R ^{[1
]}

Adachi, T ^{[1
]}

Morikawa, Y ^{[1
]}

Iwase, K ^{[1
]}

Hayashi, N ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Yokohama, Kanagawa 2440817, Japan

来源：

PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VII | 2000年 / 4066卷

关键词：

FIB mask repair; repair technology; ion beam; advanced mask;

D O I：

10.1117/12.392089

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

New ion beam column was used for mask repair. The ion irradiation was 15pA for the probe current and 31nm for the pixel size. The imaging damage was evaluated from the optical intensity value with MSM193. Optical intensity have the change within 5% in case of the repetition image in scanning until five times. The carbon film was formed with a new hydrocarbon gas which changed into the pyrene. It is a film that the halo is small and the optical density is about three times higher. The durability to the ArF laser of the carbon film was done by method of measuring the transmittance with MPM193. The carbon film has the durability that the change in the transmittance is within 0.3% by ArF laser irradiating of 30KJ . cm(-2). The program defects formed to the L&S pattern was repaired by these new conditions. The repaired pattern was printed with ArF scanner on the wafer. The repaired pattern was not transferred defect on the wafer.

引用

页码：523 / 530

页数：8