BaTi0.91(Hf0.5Zr0.5)0.09O3 thin films prepared by Nd3+:YAG (λ=266 Nm) laser ablation

被引：0

作者：

Masuda, Y ^{[1
]}

Fujita, S

Baba, A

Masumoto, H

Hirai, T

Nagata, K

机构：

[1] Hachinohe Inst Technol, Fac Engn, Dept Elect Engn, Hachinohe, Aomori 031, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 98077, Japan

[3] Natl Def Acad, Dept Elect Engn, Kanagawa 239, Japan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1998年 / 32卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have demonstrated synthesis of BaTi(Hf0.5Zr0.5)O-3 (BTHZ) thin films using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for the first time. The BTHZ thin films with a preferred orientation in the c-axis are successfully synthesized and can be carried out under an oxygen gas pressure of 3 Pa at 800 degrees C. Crystallinity of the deposited films seems to depend on the distance between atoms of each element.

引用

页码：S1372 / S1374

页数：3

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