Spintronic Oscillator Based on Spin-Current Feedback Using the Spin Hall Effect

被引:21
作者
Bhuktare, Swapnil [1 ]
Singh, Hanuman [1 ]
Bose, Arnab [1 ]
Tulapurkar, Ashwin. A. [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
关键词
MAGNETIC TUNNEL-JUNCTIONS; MICROWAVE OSCILLATIONS; TORQUE OSCILLATOR; POLARIZED CURRENT; DRIVEN; DEVICES; GENERATION; EMISSION; LOCKING; LAYER;
D O I
10.1103/PhysRevApplied.7.014022
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a radio-frequency nano-oscillator based on feedback of spin current into a magnetic tunnel junction (MTJ) with an in-plane magnetized pinned layer and an out-of-plane magnetized free layer. The MTJ is connected to a "feedback" strip of a material like tungsten with a giant spin Hall effect. On passing a dc current through the MTJ, the thermal fluctuations of its free layer produce an oscillatory voltage across itself owing to the magnetoresistance effect. This oscillatory voltage drives an oscillatory current into the tungsten strip which converts this charge current into spin current via the spin Hall effect and feeds it back to the MTJ. We show that this feedback can amplify the fluctuations further and drive the free layer into periodic precessional states. We also propose a way of implementing spin-current feedback by using a nanomagnet coupled to the free layer of the MTJ by dipolar magnetic field.
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页数:8
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