Role of oxygen concentrations on structural and optical properties of RF magnetron sputtered ZnO thin films

被引：7

作者：

Otieno, Francis ^{[1
,2
,5
]}

Airo, Mildred ^{[3
]}

Ganetsos, Theodore ^{[4
]}

Erasmus, Rudolph M. ^{[1
,2
]}

Billing, David G. ^{[1
,3
]}

Quandt, Alexander ^{[1
,2
,5
]}

Wamwangi, Daniel ^{[1
,2
,5
]}

机构：

[1] Univ Witwatersrand Wits, Mat Energy Res Grp, Private Bag 3, ZA-2050 Johannesburg, South Africa

[2] Univ Witwatersrand Wits, Mat Phys Res Inst, Sch Phys, Private Bag 3, ZA-2050 Johannesburg, South Africa

[3] Univ Witwatersrand Wits, Sch Chem, Private Bag 3, ZA-2050 Johannesburg, South Africa

[4] Univ West Attica, Perou Ralli & Thevon 250, Egaleo, Greece

[5] Hist Museum Phys & Study & Res Ctr Enrico Fermi, I-00184 Rome, Italy

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2019年 / 51卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

Zinc oxide; Photo-luminescence; Thin films; Raman; ZINC-OXIDE; PARTIAL-PRESSURE; PLASMA; GROWTH;

D O I：

10.1007/s11082-019-2076-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an investigation on the effect of oxygen flow rate on the structural and optical properties of zinc oxide thin films prepared by RF magnetron sputtering. The structural measurements were carried using grazing incidence X-ray diffraction, atomic force microscopy and Raman spectroscopy. The role of oxygen partial pressure on the crystallinity, the surface morphology and vibrational modes has been established. The optical properties of the films were investigated using FR-Basic-VIS/NIR fitted with FR-Monitor software for film thickness, refractive index and color determination. The film thickness is observed to increase when oxygen is introduced at 4 sccm but eventual decrease with increase in the flow rate an indication of initial increase in rate of deposition followed by reduction. Elaborate explanations of these trends are provided.

引用

页数：13

共 42 条

[1] A ZnO nanowire array film with stable highly water-repellent properties
Badre, Chantal
Pauporte, Thierry
Turmine, Mireille
Lincot, Daniel
[J]. NANOTECHNOLOGY, 2007, 18 (36)
[2] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization
Chen, YF
Bagnall, DM
Koh, HJ
Park, KT
Hiraga, K
Zhu, ZQ
Yao, T
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) : 3912 - 3918
[3] Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing
Chiu, C. J.
Pei, Z. W.
Chang, S. T.
Chang, S. P.
Chang, S. J.
[J]. VACUUM, 2011, 86 (03) : 246 - 249
[4] ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique
Chuang, Ricky W.
Wu, Rong-Xun
Lai, Li-Wen
Lee, Ching-Ting
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (23)
[5] Efficient energy transfer in monodisperse Eu-doped ZnO nanocrystals synthesized from metal acetylacetonates in high-boiling solvents
Du, Ya-Ping
Zhang, Ya-Wen
Sun, Ling-Dong
Yan, Chun-Hua
[J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (32) : 12234 - 12241
[6] Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films
Hong, RJ
Qi, HJ
Huang, JB
He, GB
Fan, ZX
Shao, JA
[J]. THIN SOLID FILMS, 2005, 473 (01) : 58 - 62
[7] Huang J, 2014, ZINC OXIDE THIN FILM, P7
[8] Fundamentals of zinc oxide as a semiconductor
Janotti, Anderson
Van de Walle, Chris G.
[J]. REPORTS ON PROGRESS IN PHYSICS, 2009, 72 (12)
[9] Role of oxygen atoms in the growth of magnetron sputter-deposited ZnO films
Jie, Jin
Morita, Aya
Shirai, Hajime
[J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (03)
[10] Zinc oxide - analogue of GaN with new perspective possibilities
Karpina, VA
Lazorenko, VI
Lashkarev, CV
Dobrowolski, VD
Kopylova, LI
Baturin, VA
Pustovoytov, SA
Karpenko, AJ
Eremin, SA
Lytvyn, PM
Ovsyannikov, VP
Mazurenko, EA
[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2004, 39 (11) : 980 - 992

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