Surface processes during heteroepitaxy of ZnSe on GaAs(111)A as observed by reflection high-energy electron diffraction

被引：10

作者：

Ohtake, A ^{[1
]}

Miwa, S

Kuo, LH

Kimura, K

Yasuda, T

Jin, CG

Yao, T

机构：

[1] JRCAT, Tsukuba, Ibaraki 305, Japan

[2] Angstrom Technol Partnership, Tsukuba, Ibaraki 305, Japan

[3] NAIR, Tsukuba, Ibaraki 305, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.56.14909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reflection high-energy electron diffraction and (RHEED) and x-ray-photoelectron spectroscopy have been used to study dynamical growth processes of ZnSe on GaAs(111)A-(2x2). ZnSe heteroepitaxially grows in a biatomic layer-by-layer mode with the(111)A orientation, being accompanied by distinct RHEED intensity oscillations. The growth rate of ZnSe increases and decreases with increasing Se/Zn flux ratio and ZnSe film thickness, respectively. We have found a strong dependence of the growth rate on chemical composition of the growing ZnSe surface.

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收藏

页码：14909 / 14912

页数：4

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