Oxide-film growth kinetics on Zr(0001) and Zr(10(1)over-bar0) single-crystal surfaces

被引：15

作者：

Bakradze, Georgijs ^{[1
]}

Jeurgens, Lars P. H. ^{[1
]}

Mittemeijer, Eric J. ^{[1
]}

机构：

[1] Max Planck Inst Met Res, D-70569 Stuttgart, Germany

来源：

SURFACE AND INTERFACE ANALYSIS | 2010年 / 42卷 / 6-7期

关键词：

oxidation; growth kinetics; Zr; ellipsometry; single-crystalline metal surfaces; INITIAL OXIDATION; ZIRCONIUM; OXYGEN; DIFFUSION;

D O I：

10.1002/sia.3235

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth kinetics of very thin (<10 nm) oxide films on Zr(0001) and Zr(10<(1)over bar>0) single-crystalline surfaces was investigated by real-time in situ spectroscopic ellipsometry (RISE). To this end, clean Zr(0001) and Zr(10 (1) over bar0) surfaces were prepared under ultrahigh vacuum conditions by a cyclic treatment of ion sputtering and in vacuo annealing. The thus obtained bare Zr surfaces were subsequently exposed to O-2 (g) in the temperature range of 300-450 K (at a partial oxygen pressure of 10(-4) Pa) while monitoring the growth kinetics by RISE. Quantitative RISE analysis showed that the less densely packed Zr(10 (1) over bar0) surface oxidizes more readily than the densely packed Zr(0001) surface. Copyright (C) 2010 John Wiley & Sons, Ltd.

引用

页码：588 / 591

页数：4

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