Epitaxial growth of asymmetric α-silicon nitride nanocombs

被引：5
作者：
Wang, Qiushi [1 ]
Cui, Qiliang [1 ]
Zhu, Pinwen [1 ]
Jin, Yinxia [1 ]
Hao, Jian [1 ]
Zhang, Jian [1 ]
机构：
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 2010年 / 45卷 / 07期
基金：
高等学校博士学科点专项科研基金;
关键词：
Nitrides; Epitaxial growth; Scanning tunneling microscopy; Optical properties;
D O I：
10.1016/j.materresbull.2010.03.026
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The asymmetric alpha-Si3N4 nanocombs have been prepared by direct current arc discharge method without the addition of any catalyst or template. The nanocombs are composed of closely packed Si3N4 nanowires, which grow perpendicular to the central axial nanorods in an epitaxial manner. The growth mechanism of the alpha-Si3N4 nanocombs can be considered as a combination of the vapor solid mechanism and the secondary epitaxial nucleation process. The photoluminescence spectra of the nanocombs show a strong blue light emission peak at about 424 nm. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：888 / 891
页数：4
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