Harmonic balance simulation of RF injection effects in analog circuits

被引：16

作者：

Hattori, Y ^{[1
]}

Kato, T ^{[1
]}

Hayashi, H ^{[1
]}

Tadano, H ^{[1
]}

Nagase, H ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Aichi 48011, Japan

来源：

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 1998年 / 40卷 / 02期

关键词：

bipolar transistor; dc shift; differential amplifier; frequency-domain analysis; harmonic balance; injection; RF; simulation; undesired behavior;

D O I：

10.1109/15.673617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF noise immunity is becoming a serious problem for integrated circuits (IC's). We have found a frequency-domain simulator [harmonic balance (HB)I to be useful for analyzing the undesired IC behavior, especially the de output shift under the large RF injection. The simulator has the following advantages in comparison with a conventional time-domain simulator such as SPICE: 1) de output shifts can be simulated in a very short time using a conventional bipolar transistor model and 2) steady-state current or voltage waveforms at each node in an IC are directly and easily obtained. This paper describes the methods and results of the de shifts analysis of a bipolar transistor or a differential amplifier using the HE simulator.

引用

页码：120 / 126

页数：7

共 23 条

[1] HARMONIC-BALANCE AND FREQUENCY-DOMAIN SIMULATION OF NONLINEAR MICROWAVE CIRCUITS USING THE BLOCK NEWTON METHOD [J].