Characteristics of CdS films brush electrodeposited on low-temperature substrates

被引:5
|
作者
Murali, K. R. [1 ]
Kumaresan, S.
Prince, J. Joseph
机构
[1] Cent Electrochem Res Inst, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
[2] Saranathan Coll Engn, Dept Phys, Tiruchirappalli, India
[3] Bharathidasan Sch Engn & Technol, Dept Phys, Tiruchirappalli, India
关键词
CdS; II-VI; thin films; brush plating;
D O I
10.1016/j.mssp.2006.11.002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cadmium sulfide films were deposited by the brush plating technique on titanium and conducting glass substrates using a current density of 80 mA cm(-2). X-ray diffraction studies indicated the polycrystalline nature of the films. As the deposition temperature decreased, the peaks were broad indicating the formation of nanocrystallites. Optical absorption measurements yielded band gap values in the range of 2.60-3.00 eV as the deposition temperature decreases. XPS studies confirmed the formation of CdS. Atomic force microscope studies indicated the roughness of the films decreases with decrease of deposition temperature. The films have exhibited photoresponse without any pre-heat treatment. (C) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:56 / 60
页数:5
相关论文
共 50 条
  • [41] Fabrication and its characteristics of low-temperature polycrystalline silicon thin films
    AiMin Wu
    WanTing Deng
    FuWen Qin
    BoHai Li
    J. Lassaut
    Xin Jiang
    Chuang Dong
    Science in China Series E: Technological Sciences, 2009, 52 : 260 - 263
  • [42] Fabrication and its characteristics of low-temperature polycrystalline silicon thin films
    Wu Aimin
    Deng WanTing
    Qin Fuwen
    Li BoHai
    Lassaut, J.
    Jiang Xin
    Dong Chuang
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2009, 52 (01): : 260 - 263
  • [43] Fabrication and its characteristics of low-temperature polycrystalline silicon thin films
    LASSAUT J
    中国科学:技术科学, 2010, (04) : 472 - 472
  • [44] AES INVESTIGATIONS ON LOW-TEMPERATURE INTERDIFFUSION IN THIN AU FILMS ON AG (111) SUBSTRATES
    MEINEL, K
    KLAUA, M
    AMMER, C
    BETHGE, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (02): : 493 - 507
  • [45] DC DIELECTRIC-BREAKDOWN IN INSULATING FILMS GROWN AT LOW-TEMPERATURE ON GAAS SUBSTRATES
    KLEPS, I
    PAVELESCU, C
    THIN SOLID FILMS, 1991, 202 (01) : L1 - L4
  • [46] Low-temperature growth of GaN and InxGa1-xN films on glass substrates
    Sato, Y
    Kurosaki, A
    Sato, S
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 42 - 46
  • [47] MAGNETIC-PROPERTIES AND MAGNETIZATION PROCESS IN COCR FILMS SPUTTERED ON LOW-TEMPERATURE SUBSTRATES
    HONDA, S
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (12): : 2278 - 2285
  • [48] Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411)A substrates
    G. B. Galiev
    E. A. Klimova
    S. S. Pushkarev
    A. N. Klochkov
    I. N. Trunkin
    A. L. Vasiliev
    P. P. Maltsev
    Crystallography Reports, 2017, 62 : 589 - 596
  • [49] DRY ETCHING OF LOW-TEMPERATURE DEPOSITED SILICON-NITRIDE FILMS ON GAAS SUBSTRATES
    CHEN, ADM
    HWANG, JCM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C218 - C218
  • [50] DEPOSITION OF THIN-FILMS OF COPPER ON SILICON SUBSTRATES AT LOW-TEMPERATURE BY THE ICB METHOD
    SOSNOWSKI, M
    YAMADA, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 874 - 877