Effect of H2/O2 ratio on the GeO2 concentration profile in SiO2:GeO2 glass preforms prepared by vapor-phase axial deposition

被引:8
作者
Cuevas, RF [1 ]
Gusken, E [1 ]
Sekiya, EH [1 ]
Ogata, DY [1 ]
Torikai, D [1 ]
Suzuki, CK [1 ]
机构
[1] Univ Estadual Campinas, Dept Mat Engn, Fac Mech Engn, Lab Integrated Quartz Cycle, BR-13083970 Campinas, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
D O I
10.1016/S0022-3093(00)00134-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
GeO2 radial concentration in silica glass preforms, prepared by vapor-phase axial deposition (VAD) method, was analyzed by X-ray fluorescence (XRF) measurements. The results were used to evaluate the effect of the H-2/O-2 ratio used during the deposition process in the formation of the GeO2 concentration profile. Considering four different H-2/O-2 ratios, GeO2 distribution was observed to decrease monotonically with the increasing radius for H-2/O-2 less than or equal to 1.5, and the acute shape around the core center of the GeO2 concentration profile, decreased with increasing H-2/O-2 ratio. When the ratio H-2/O-2 = 2.5, the central doping of GeO2 was minimal, and a constant distribution was obtained along glass preform radii. The results seem to indicate that the control of spatial distribution in the concentration of GeO2 deposited is favorable for the ratio H-2/O-2 less than or equal to 1.5. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:252 / 256
页数:5
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