Whispering gallery mode in periodic InGaN-based hexagonal nanoring arrays grown by rf-MBE using Ti-mask selective-area growth

被引：6

作者：

Kouno, Tetsuya ^{[1
,3
]}

Kishino, Katsumi ^{[1
,2
,3
]}

Kikuchi, Akihiko ^{[1
,2
,3
]}

机构：

[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan

[2] Sophia Univ, Sophia Nanotechnol Res Ctr, Chiyoda Ku, Tokyo 1028554, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 01期

关键词：

GAN;

D O I：

10.1002/pssa.200982639

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated periodic IncaN-based hexagonal nanoring arrays by rf-molecular beam epitaxy (rf-MBB) with Ti-mask selective area growth (SAG). Multiple photoluminescence peaks from InGaN-based hexagonal nanorings were observed in room temperature photoluminescence (RT-PL) measurements with 325 nm He-co laser. We employed a simple plane wave model and a two-dimensional finite difference time domain (2D-FDTD) method in the numerical analysis to investigate these multiple pearks. Experimental data was in good coincidence with calculated data, evincing that whispering gallery modes (WGMS) supported in the InGaN-based hexagonal nanorings were responsible for the multipeaks.

引用

页码：37 / 40

页数：4

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